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參數(shù)資料
| 型號： | 933876540135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 46K |
| 代理商： | 933876540135 |
2000 May 25
2
Philips Semiconductors
Product specication
Schottky barrier diode
BAS85
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed small SMD
package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
ka
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IF(AV)
average forward current
VRWM = 25 V; a = 1.57; δ = 0.5;
note 1; Fig.2
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp =10ms
5A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
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