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參數資料
| 型號： | 933939380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 48K |
| 代理商： | 933939380115 |
2000 May 25
3
Philips Semiconductors
Product specication
Schottky barrier diode
BAS86
ELECTRICAL CHARACTERISTICS
Tamb =25 °C; unless otherwise specied.
Note
1. Pulsed test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 0.1 mA
300
mV
IF = 1 mA
380
mV
IF = 10 mA
450
mV
IF = 30 mA
600
mV
IF = 100 mA
900
mV
IR
reverse current
VR = 40 V; see Fig.4; note 1
5
A
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ; measured at IR = 1 mA; see Fig.6
4ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
8
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
320
K/W
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