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參數(shù)資料
| 型號： | 933947770185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 57K |
| 代理商： | 933947770185 |
2001 Oct 12
2
Philips Semiconductors
Product specication
General purpose double diode
BAV23S
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 200 V
Repetitive peak reverse voltage:
max. 250 V
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
General purpose where high
breakdown voltages are required.
DESCRIPTION
The BAV23S consists of two general
purpose diodes connected in series
fabricated in planar technology, and
encapsulated in the small SOT23
plastic SMD package.
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
PINNING
TYPE NUMBER
MARKING
CODE(1)
BAV23S
L31 or
V5
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM232
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
250
V
VRRM
repetitive peak reverse voltage series connection
500
V
VR
continuous reverse voltage
200
V
VR
continuous reverse voltage
series connection
400
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
225
mA
double diode loaded; note 1; see Fig.2
125
mA
IFRM
repetitive peak forward current
625
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to surge;
see Fig.4
t=1
s
9A
t = 100
s
3A
t = 10 ms
1.7
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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