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參數(shù)資料
| 型號(hào)： | 933995370602 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 模擬波形發(fā)生器 |
| 英文描述： | PULSE, 0.5 MHz, TIMER, PDSO8 |
| 封裝： | PLASTIC, SOT-96, SO-8 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 66K |
| 代理商： | 933995370602 |
Philips Semiconductors Linear Products
Product specification
ICM7555
General purpose CMOS timer
August 31, 1994
338
EQUIVALENT BLOCK DIAGRAM
NOTE:
UNUSED INPUTS SHOULD BE CONNECTED TO APPROPRIATE VOLTAGE FROM TRUTH TABLE.
V
DD
8
R
6
5
2
R
1
R
COMPARATOR
A
COMPARATOR
B
FLIP–FLOP
RESET
4
OUTPUT
DRIVERS
3
OUTPUT
DISCHARGE
7
N
1
+
–
+
–
THRESHOLD
CONTROL
VOLTAGE
TRIGGER
TRUTH TABLE
THRESHOLD VOLTAGE
TRIGGER VOLTAGE
RESET1
OUTPUT
DISCHARGE SWITCH
DON’T CARE
LOW
ON
>2/3(V+)
> 1/3(V+)
HIGH
LOW
ON
VTH < 2/3
VTR > 1/3
HIGH
STABLE
DON’T CARE
<1/3(V+)
HIGH
OFF
NOTES:
1. RESET will dominate all other inputs: TRIGGER will dominate over THRESHOLD.
ABSOLUTE MAXIMUM RATINGS1
SYMBOL
PARAMETER
RATING
UNITS
VDD
Supply voltage
+18
V
VTRIG1
Trigger input voltage
VCV
Control voltage
> -0.3 to
VTH
Threshold input voltage
<VDD + 0.3
V
VRST
RESET input voltage
IOUT
Output current
100
mA
PDMAX
Maximum power dissipation, TA = 25°C (still air)2
N package
1160
mW
D package
780
mW
TSTG
Storage temperature range
-65 to +150
°C
TSOLD
Lead temperature (Soldering 60s)
300
°C
NOTES:
1. Due to the SCR structure inherent in the CMOS process used to fabricate these devices, connecting any terminal to a voltage greater than
VDD + 0.3V or less than GND -0.3V may cause destructive latch-up. For this reason it is recommended that no inputs from external sources
not operating from the same power supply be applied to the device before its power supply is established. In multiple systems, the supply of
the ICM7555 must be turned on first.
2. Derate above 25
°C, at the following rates:
N package at 9.3mW/
°C
D package at 6.2mW/
°C
3. See “Power Dissipation Considerations” section.
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