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參數資料
| 型號： | 934014550127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 62K |
| 代理商： | 934014550127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F ≤ 0.895 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 10 A
Low thermal resistance
I
RRM = 0.2 A
t
rr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
anode 1
2
cathode
1
3
anode 2
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYQ28E/ BYQ28EB/ BYQ28ED
-150
-200
V
RRM
Peak repetitive reverse
-
150
200
V
voltage
V
RWM
Working peak reverse
-
150
200
V
voltage
V
R
Continuous reverse voltage
-
150
200
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5; T
mb ≤ 119 C
-
10
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 119 C
-
10
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
50
A
current per diode
t = 8.3 ms
-
55
A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
t
p = 2 s; δ = 0.001
-
0.2
A
surge current per diode
I
RSM
Peak non-repetitive reverse
t
p = 100 s
-
0.2
A
surge current per diode
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 40
150
C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a1
a2
13
2
1
2
3
tab
13
tab
2
12 3
tab
October 1998
1
Rev 1.300
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