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參數資料
| 型號： | 934017380185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 齊納二極管 |
| 英文描述： | 6.2 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 43K |
| 代理商： | 934017380185 |
1999 May 25
2
Philips Semiconductors
Product specication
Low-voltage avalanche regulator diodes
PLVA600A series
FEATURES
Very low dynamic impedance at
low currents: approximately 1
20 of
conventional series
Hard breakdown knee
Low noise: approximately 110 of
conventional series
Total power dissipation:
max. 250 mW
Small tolerances of VZ
Working voltage range:
nom. 5.0 to 6.8 V
Non-repetitive peak reverse power
dissipation: max. 30 W.
APPLICATIONS
Low current, low power, low noise
applications
CMOS RAM back-up circuits
Voltage stabilizers
Voltage limiters
Smoke detector relays.
DESCRIPTION
High performance voltage regulator
diodes in small SOT23 plastic SMD
packages.
The series consists of PLVA650A to
PLVA668A.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM243
2
n.c.
1
3
21
3
Top view
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PLVA650A
9A
PLVA653A
9B
PLVA656A
9C
PLVA659A
9D
PLVA662A
9E
PLVA665A
9F
PLVA668A
9G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZRM
repetitive peak working current
tp = 100 s; δ = 10%
250
mA
PZSM
non-repetitive peak reverse power dissipation tp = 100 s; Tj = 150 °C30
W
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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