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參數資料
| 型號： | 934018000135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變容二極管 |
| 英文描述： | VHF BAND, 12.5 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SMD, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 53K |
| 代理商： | 934018000135 |
1998 Sep 15
2
Philips Semiconductors
Product specication
VHF variable capacitance diode
BB131
FEATURES
Excellent linearity
Very small plastic SMD package
C28: 1 pF; ratio: 14.
APPLICATIONS
Electronic tuning in satellite tuners
Tunable coupling
VCO.
DESCRIPTION
The BB131 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+125
°C
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: P1.
Cathode side indicated by a bar.
handbook, 4 columns
ka
MAM130
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. VR is the value at which Cd = 9 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR =30V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance
f = 470 MHz; note 1
3
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
817
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
0.7
1.055
pF
capacitance ratio
f = 1 MHz
12
16
C
d 0.5V
()
C
d28V
()
----------------------
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