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參數資料
| 型號： | 934018010135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變容二極管 |
| 英文描述： | VHF BAND, 67.5 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SMD, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 54K |
| 代理商： | 934018010135 |
1998 Sep 15
2
Philips Semiconductors
Product specication
VHF variable capacitance diode
BB132
FEATURES
High linearity
Excellent matching to 1% DMA
Very small plastic SMD package
C28: 2.5 pF; ratio: 26.
APPLICATIONS
Electronic tuning in VHF television
tuners, band A up to 160 MHz
VCO.
DESCRIPTION
The BB132 is a variable capacitance
diode fabricated in planar technology,
and encapsulated in the SOD323
very small plastic SMD package.
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+125
°C
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: P2.
Cathode side indicated by a bar.
handbook, 4 columns
ka
MAM130
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. VR is the value at which Cd = 30 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR =30V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance
f = 100 MHz; note 1
2
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
60
75
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
2.3
2.75
pF
capacitance ratio
f = 1 MHz
24
30
capacitance matching
VR = 0.5 to 28 V; in a sequence of 4 diodes
(gliding)
1%
VR = 0.5 to 28 V; in a sequence of 15 diodes
(gliding)
2%
C
d 0.5V
()
C
d28V
()
----------------------
C
d
C
d
----------
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