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參數(shù)資料
| 型號： | 934020800215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 66K |
| 代理商： | 934020800215 |
2001 Oct 11
3
Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAS70 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
70
V
IF
continuous forward current
70
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
70
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
100
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
410
mV
IF = 10 mA
750
mV
IF =15mA
1
V
IR
reverse current
VR = 50 V; note 1; see Fig.4
100
nA
VR = 70 V; note 1; see Fig.4
10
A
τ
charge carrier life time (Krakauer
method)
IF = 5 mA
100
ps
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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