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參數(shù)資料
| 型號： | 934022180112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1650 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 72K |
| 代理商： | 934022180112 |
1996 Sep 26
2
Philips Semiconductors
Product specication
Damper diode
BY228
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
APPLICATIONS
Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRSM
non-repetitive peak reverse voltage
1650
V
VRRM
repetitive peak reverse voltage
1650
V
VR
continuous reverse voltage
1500
V
IFWM
working peak forward current
Tamb =75 °C; PCB mounting (see
Fig.4); see Fig.2
5A
IFRM
repetitive peak forward current
10
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
50
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 5 A; Tj =Tj max; see Fig.3
1.4
V
IF = 5 A; see Fig.3
1.5
V
IR
reverse current
VR =VRmax; Tj = 150 °C
150
A
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.6
1
s
tfr
forward recovery time
when switched to IF = 5 A in 50 ns;
Tj =Tj max; Fig.7
1
s
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