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參數資料
| 型號： | 934028440185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 32K |
| 代理商： | 934028440185 |
1996 Sep 03
3
Philips Semiconductors
Product specication
High-speed double diode
1PS181
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF =1mA
610
mV
IF =10mA
740
mV
IF =50mA
1.0
V
IF = 100 mA
1.2
V
IR
reverse current
see Fig.4
VR =25V
30
nA
VR =80V
0.5
A
VR =25V; Tj = 150 °C
30
A
VR =80V; Tj = 150 °C
100
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.5
2.0
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.6
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
250
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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