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參數資料
| 型號： | 934028450185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 32K |
| 代理商： | 934028450185 |
1996 Sep 03
2
Philips Semiconductors
Product specication
High-speed double diode
1PS226
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS226 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
Fig.1 Simplified outline (SC59) and symbol.
Top view
21
3
MAM083
21
3
Marking code: C3T.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
80
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
215
mA
double diode loaded; see Fig.2;
note 1
125
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge
t=1
s
4A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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