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參數資料
| 型號： | 934030310112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 2/8頁 |
| 文件大小： | 60K |
| 代理商： | 934030310112 |
1996 Jun 07
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW96 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW96D
800
V
BYW96E
1000
V
VR
continuous reverse voltage
BYW96D
800
V
BYW96E
1000
V
IF(AV)
average forward current
Ttp =50 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
3A
IF(AV)
average forward current
Tamb =55 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
1.25
A
IFRM
repetitive peak forward current
Ttp =50 °C; see Fig.4
30
A
Tamb =55 °C; see Fig.5
13
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
70
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.7
65
+175
°C
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