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參數(shù)資料
| 型號： | 934030520133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.3 A, 1400 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 86K |
| 代理商： | 934030520133 |
1996 Sep 18
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW97 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW97F
1200
V
BYW97G
1400
V
VR
continuous reverse voltage
BYW97F
1200
V
BYW97G
1400
V
IF(AV)
average forward current
Ttp =50 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
3.3
A
IF(AV)
average forward current
Tamb =55 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
1.3
A
IFRM
repetitive peak forward current
Ttp =50 °C; see Fig.4
33
A
Tamb =55 °C; see Fig.5
13
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
60
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.7
65
+175
°C
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