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參數(shù)資料
| 型號(hào)： | 934034490135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 55K |
| 代理商： | 934034490135 |
1999 Mar 26
2
Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAS70W series
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Very small SMD package
Low capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes. Single
diodes (BAS70W) and double diodes
with different pinning (BAS70-04W;
-05W; -06W) are available.
The diodes are encapsulated in a
SOT323 very small plastic SMD
package.
PINNING
PIN
BAS70
W
-04W
-05W
-06W
1a1
a1
k1
2
n.c.
k2
a2
k2
3k1
k1, a2
k1, k2
a1, a2
Fig.1
Simplified outline
(SOT323) and pin
configuration.
handbook, 2 columns
3
12
MBC870
Top view
Fig.2
BAS70W single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3
BAS70-04W diode
configuration (symbol).
3
12
MLC358
Fig.4
BAS70-05W diode
configuration (symbol).
3
12
MLC359
Fig.5
BAS70-06W diode
configuration (symbol).
3
12
MLC360
MARKING
Note
1.
= -: Made in Hong Kong.
= t: Made in Malaysia.
TYPE NUMBER
MARKING
CODE(1)
BAS70W
73
BAS70-04W
74
BAS70-05W
75
BAS70-06W
76
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| 934034480115 | 0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
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