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參數資料
| 型號： | 934034530185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.12 A, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 63K |
| 代理商： | 934034530185 |
2001 Oct 10
3
Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAS40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
40
V
IF
continuous forward current
120
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
120
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
200
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
380
mV
IF = 10 mA
500
mV
IF =40mA
1
V
IR
reverse current
VR = 30 V; note 1; see Fig.4
1
A
VR = 40 V; note 1; see Fig.4
10
A
Cd
diode capacitance
f = 1 MHz; VR = 0 ; see Fig.6
5
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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