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參數(shù)資料
| 型號(hào)： | 934037800127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 45K |
| 代理商： | 934037800127 |
Philips Semiconductors
Product specification
Triacs
BT137X series
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25C),
versus junction temperature T
j.
Fig.9. Normalised holding current I
H(Tj)/ IH(25C),
versus junction temperature T
j.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs, versus
pulse width t
p.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T/dt.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.264 V
Rs = 0.0378 Ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
tp / s
Zth j-hs (K/W)
t
p
P
t
D
bidirectional
unidirectional
with heatsink compound
without heatsink compound
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
7.9
4.7
dV/dt (V/us)
2.8
dIcom/dt =
10 A/ms
6.1
3.6
off-state dV/dt limit
BT137...G SERIES
BT137 SERIES
BT137...F SERIES
June 2001
5
Rev 1.400
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