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參數資料
| 型號： | 934042950127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 8 A, 600 V, SCR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 934042950127 |
Philips Semiconductors
Product specification
Thyristors
BT258 series
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristors
SYMBOL
PARAMETER
MAX.
MAX. UNIT
in a plastic envelope, intended for use
in general purpose switching and
BT258-
500R
600R
800R
phase control applications. These
V
DRM,
Repetitive peak off-state
500
600
800
V
devices are intended to be interfaced
V
RRM
voltages
directly
to
microcontrollers,
logic
I
T(AV)
Average on-state current
5
A
integrated circuits and other low
I
T(RMS)
RMS on-state current
8
A
power gate trigger circuits.
I
TSM
Non-repetitive peak on-state
75
A
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
V
DRM, VRRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
mb ≤ 111 C
-
5
A
I
T(RMS)
RMS on-state current
all conduction angles
-
8
A
I
TSM
Non-repetitive peak
half sine wave; T
j = 25 C prior to
on-state current
surge
t = 10 ms
-
75
A
t = 8.3 ms
-
82
A
I
2tI2t for fusing
t = 10 ms
-
28
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 10 A; IG = 50 mA;
-
50
A/
s
on-state current after
dI
G/dt = 50 mA/s
triggering
I
GM
Peak gate current
-
2
A
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
2
C
temperature
ak
g
12 3
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
2 Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
October 2002
1
Rev 2.000
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