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參數資料
型號: 934045070113
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.225 A, 10000 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, MSB026, 2 PIN
文件頁數: 3/10頁
文件大?。?/td> 76K
代理商: 934045070113
2000 Jan 13
2
Philips Semiconductors
Product specication
High-voltage soft-recovery
controlled avalanche rectiers
BYX101G; BYX102G;
BYX103G; BYX104G
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
Recovery times ranging from 600 to 50 ns
Soft-recovery switching characteristics
Compact construction.
APPLICATIONS
High-voltage power supply units in, for example, X-ray
or radar systems.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
MARKING
TYPE NUMBER
CATHODE BAND
BYX101G
black
BYX102G
red
BYX103G
green
BYX104G
violet
handbook, halfpage
MSB026
a
k
Fig.1 Simplified outline (SOD88A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
10
kV
VRW
working reverse voltage
9kV
IF(AV)
average forward current
averaged over any 20 ms period;
Toil =25 °C
BYX101G
400
mA
BYX102G
360
mA
BYX103G
310
mA
BYX104G
225
mA
average forward current
averaged over any 20 ms period;
Toil =70 °C
BYX101G
285
mA
BYX102G
255
mA
BYX103G
220
mA
BYX104G
160
mA
IFSM
non-repetitive peak forward current
t = 10 ms; half sinewave;
Tj =45 °C prior to surge
BYX101G
20
A
BYX102G
15
A
BYX103G
14
A
BYX104G
14
A
相關PDF資料
PDF描述
934045050153 0.36 A, 10000 V, SILICON, SIGNAL DIODE
934045070153 0.225 A, 10000 V, SILICON, SIGNAL DIODE
934045060153 0.31 A, 10000 V, SILICON, SIGNAL DIODE
934045050113 0.36 A, 10000 V, SILICON, SIGNAL DIODE
934045060113 0.31 A, 10000 V, SILICON, SIGNAL DIODE
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