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參數(shù)資料
型號(hào): 934045080153
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.65 A, 5000 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, MSB026, 2 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 76K
代理商: 934045080153
2000 Jan 13
2
Philips Semiconductors
Product specication
High-voltage soft-recovery
controlled avalanche rectiers
BYX105G; BYX106G;
BYX107G; BYX108G
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
Recovery times ranging from 600 to 50 ns
Soft-recovery switching characteristics
Compact construction.
APPLICATIONS
High-voltage power supply units in, for example, X-ray
or radar systems.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
MARKING
TYPE NUMBER
CATHODE BAND
BYX105G
black
BYX106G
red
BYX107G
green
BYX108G
violet
handbook, halfpage
MSB026
a
k
Fig.1 Simplified outline (SOD88A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
5kV
VRW
working reverse voltage
4.5
kV
IF(AV)
average forward current
averaged over any 20 ms period;
Toil =25 °C
BYX105G
650
mA
BYX106G
575
mA
BYX107G
480
mA
BYX108G
340
mA
average forward current
averaged over any 20 ms period;
Toil =70 °C
BYX105G
460
mA
BYX106G
400
mA
BYX107G
340
mA
BYX108G
240
mA
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