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參數(shù)資料
| 型號(hào)： | 934047100127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 400 V, SILICON, RECTIFIER DIODE, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 51K |
| 代理商： | 934047100127 |
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74W series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.12 V
High thermal cycling performance
Low thermal resistance
I
O(AV) = 30 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode, ultra-fast,
PIN
DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high
1
anode 1
frequency switched mode power
supplies.
2
cathode
The BYV74W series is supplied in
3
anode 2
the conventional leaded SOT429
(TO247) package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV74W
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
RWM
Crest working reverse voltage
-
300
400
500
V
R
Continuous reverse voltage
T
mb ≤ 136C
-
300
400
500
V
I
O(AV)
Average rectified output current square wave;
δ = 0.5;
-
30
A
(both diodes conducting)
1
T
mb ≤ 94 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
30
A
per diode
T
mb ≤ 94 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode.
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
2.4
K/W
heatsink
both diodes conducting
-
1.4
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
45
-
K/W
ambient
k
a1
a2
13
2
3
1
1 Neglecting switching and reverse current losses.
April 1998
1
Rev 1.000
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