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參數(shù)資料
型號(hào): 934048190118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 800 V, 16 A, SNUBBERLESS TRIAC
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 77K
代理商: 934048190118
Philips Semiconductors
Product specification
Triacs
BTA216B series B
high commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
SYMBOL
PARAMETER
MAX.
MAX. UNIT
triacs in a plastic envelope suitable
for surface mounting, intended for use
BTA216B-
500B
600B
800B
in circuits where high static and
V
DRM
Repetitive peak off-state
500
600
800
V
dynamic dV/dt and high dI/dt can
voltages
occur. These devices will commutate
I
T(RMS)
RMS on-state current
16
A
the full rated rms current at the
I
TSM
Non-repetitive peak on-state
140
A
maximum rated junction temperature,
current
without the aid of a snubber.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
16
A
T
mb ≤ 99 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 C prior to
surge
t = 20 ms
-
140
A
t = 16.7 ms
-
150
A
I
2tI2t for fusing
t = 10 ms
-
98
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 20 A; IG = 0.2 A;
100
A/
s
on-state current after
dI
G/dt = 0.2 A/s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
13
mb
2
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
October 1997
1
Rev 1.100
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