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參數資料
| 型號： | 934049330118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 文件頁數： | 2/8頁 |
| 文件大小： | 119K |
| 代理商： | 934049330118 |
Philips Semiconductors
Product specification
Triacs
BT136S series E
sensitive gate
BT136M series E
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
3.0
K/W
junction to mounting base
half cycle
-
3.7
K/W
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
2.5
10
mA
T2+ G-
-
4.0
10
mA
T2- G-
-
5.0
10
mA
T2- G+
-
11
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
3.0
15
mA
T2+ G-
-
10
20
mA
T2- G-
-
2.5
15
mA
T2- G+
-
4.0
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
2.2
15
mA
V
T
On-state voltage
I
T = 5 A
-
1.4
1.70
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A; Tj = 125 C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
-
50
-
V/
s
off-state voltage
exponential waveform; gate open circuit
t
gt
Gate controlled turn-on
I
TM = 6 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
s
time
dI
G/dt = 5 A/s
July 1997
2
Rev 1.000
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|---|---|
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