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參數資料
| 型號： | 934049780118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | 934049780118 |
Philips Semiconductors
Product specification
Triacs
BT137S series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated triacs in a plastic envelope,
SYMBOL
PARAMETER
MAX.
UNIT
suitable for surface mounting, intended
for use in applications requiring high
BT137S-
600
800
bidirectional
transient
and
blocking
BT137S-
600F
800F
voltage capability and high thermal
BT137S-
600G
800G
cycling
performance.
Typical
V
DRM
Repetitive peak off-state
600
800
V
applications
include
motor
control,
voltages
industrial and domestic lighting, heating
I
T(RMS)
RMS on-state current
8
A
and static switching.
I
TSM
Non-repetitive peak on-state
65
A
current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
MT1
2
MT2
3
gate
tab
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
-800
V
DRM
Repetitive peak off-state
-
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb ≤ 102 C
-
8
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 C prior to
on-state current
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
71
A
I
2tI2t for fusing
t = 10 ms
-
21
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 12 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/s
triggering
T2+ G+
-
50
A/
s
T2+ G-
-
50
A/
s
T2- G-
-
50
A/
s
T2- G+
-
10
A/
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
June 2001
1
Rev 1.400
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