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參數(shù)資料
型號(hào): 934053550118
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 5 A, 25 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 59K
代理商: 934053550118
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1025CTD series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 10 A
Low thermal resistance
V
F ≤ 0.4 V
GENERAL DESCRIPTION
PINNING
SOT428
Dual
schottky
rectifier
diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in low voltage, high frequency
1
anode 1
switched mode power supplies.
2
cathode
1
The
PBYR1025CTD
series
is
supplied in the SOT428 surface
3
anode 2
mounting package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
20CTD
25CTD
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 107 C
-
20
25
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5; T
mb ≤ 136 C
-
10
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 136 C
-
10
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
90
A
current per diode
t = 8.3 ms
-
100
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a1
a2
13
2
1
2
3
tab
1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998
1
Rev 1.000
相關(guān)PDF資料
PDF描述
934053960118 5 A, 20 V, SILICON, RECTIFIER DIODE
934053940118 1.5 A, 20 V, SILICON, RECTIFIER DIODE
934053530118 1.5 A, 25 V, SILICON, RECTIFIER DIODE
934054060118 7.5 A, 40 V, SILICON, RECTIFIER DIODE
934053510118 7.5 A, 45 V, SILICON, RECTIFIER DIODE
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