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參數資料
| 型號： | 934053960118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 20 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 3/6頁 |
| 文件大小： | 59K |
| 代理商： | 934053960118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1025CTD series
Schottky barrier
Fig.1. Maximum forward dissipation per diode
P
F = f(IF(AV)); square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation per diode
P
F = f(IF(AV)); sinusoidal current waveform where
a = form factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
per diode I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.5. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb = f(tp).
0123456
78
0
1
2
3
4
0.5
0.2
0.1
PBYR1025CTD
Rs = 0.03 Ohms
Vo = 0.25 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
T
I
D =
tp
T
t
D = 1.0
Tmb(max) / C
150
147
144
141
138
0
25
50
100mA
10mA
1mA
100uA
10uA
Reverse current, IR (A)
Reverse voltage, VR (V)
50 C
75 C
100 C
125 C
PBYR1045CTD
Tj = 25 C
0123
45
0
0.5
1
1.5
2
2.5
3
a = 1.57
1.9
2.2
2.8
4
PBYR1025CTD
Rs = 0.03 Ohms
Vo = 0.25 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
147.75
145.5
143.25
141
138.75
136.5
1
10
100
1000
PBYR1025CTD
Reverse voltage, VR (V)
Junction capacitance, Cd (pF)
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
PBYR1025CTD
Forward voltage, VR (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYR1025CTD
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
T
P
t
D
February 1998
3
Rev 1.000
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