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參數資料
| 型號： | 934054753127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 42K |
| 代理商： | 934054753127 |
Philips Semiconductors
Product specification
Rectifier diode
BYC10-600
ultrafast, low switching loss
Fig.9. Definition of reverse recovery parameters t
rr, Irrm
Fig.10. Typical forward recovery voltage, V
fr as a
function of rate of change of current dI
F/dt.
Fig.11. Definition of forward recovery voltage V
fr
Fig.12. Typical and maximum forward characteristic
I
F = f(VF); Tj = 25C and 150C.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. I
R = f(VR); parameter Tj
Fig.14. Maximum thermal impedance Z
th j-mb as a
function of pulse width.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
012
34
0
5
10
15
20
BYC10-600
Forward voltage, VF (V)
Forward current, IF (A)
max
typ
Tj = 25 C
Tj = 150 C
0
50
100
150
200
0
5
10
15
20
BYC10-600
Tj = 25 C
Rate of change of current, dIF/dt (A/ s)
Peak forward recovery voltage, Vfr (V)
typ
IF = 10 A
0
100
200
300
400
500
600
BYC10-600
1uA
10uA
100uA
1mA
10mA
100mA
Reverse leakage current (A)
Reverse voltage (V)
Tj = 125 C
100 C
75 C
50 C
25 C
time
V F
V
fr
V F
I
F
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV79E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
T
P
t
D
March 2001
4
Rev 1.400
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