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參數資料
| 型號： | 934054754118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 49K |
| 代理商： | 934054754118 |
Philips Semiconductors
Product specification
Rectifier diode
BYC10B-600
ultrafast, low switching loss
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where I
F(AV) =IF(RMS) x √D.
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dI
F/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
rr, as a function
of rate of change of current dI
F/dt.
Fig.8. Typical peak reverse recovery current, I
rrm as a
function of rate of change of current dI
F/dt.
0
5
10
15
0
5
10
15
20
25
30
0.5
0.2
0.1
BYC10-600
Rs = 0.05 Ohms
Vo = 1.3 V
D = 1.0
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) C
140
130
120
110
100
90
D =
tp
T
t
I
time
ID
Irrm
VD
dIF/dt
ID = IL
losses due to
diode reverse recovery
100
1000
0
0.05
0.1
0.15
0.2
0.25
Rate of change of current, dIF/dt (A/us)
f = 20 kHz
Diode reverse recovery switching losses, Pdsw (W)
IF = 5 A
20 A
10 A
Tj = 125 C
VR = 400 V
100
1000
10
100
BYC10-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
Tj = 125 C
VR = 400 V
IF = 5 A
20 A
10 A
100
1000
0
1
2
3
4
5
6
7
8
BYC10-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
IF = 5 A
10 A
20 A
f = 20 kHz
Tj = 125 C
VR = 400 V
100
1000
1
10
100
BYC10-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
20 A
March 2001
3
Rev 1.400
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