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參數資料
| 型號： | 934054777118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 20 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 934054777118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYL3025CT, PBYL3025CTB series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.5. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb = f(tp).
0
5
10
15
20
25
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
PBYL3025CT
Rs = 0.009 Ohms
Vo = 0.32 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
T
I
D =
tp
T
t
146
142
138
134
130
126
0
5
10
15
20
25
10uA
100uA
1mA
10mA
100mA
1A
PBYR2025CT
VR / V
IR / A
100
25
Tj = 150 C
125
75
50
0
5
10
15
0
2
4
6
8
10
a = 1.57
1.9
2.2
2.8
4
PBYL3025CT
Rs = 0.009 Ohms
Vo = 0.32 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
146
142
138
134
130
1
10
100
1000
10000
PBYR2025CT
VR / V
Cd / pF
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
25
30
PBYR2025CT
VF / V
IF / A
Tj = 125 C
Tj = 25 C
typ
max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYL3025CT
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
T
P
t
D
March 1998
3
Rev 1.000
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