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參數資料
| 型號： | 934054897127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 38K |
| 代理商： | 934054897127 |
Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 1500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.35 V / 1.5 V
High thermal cycling performance
Isolated mounting tab
I
F(peak) = 6 A (f = 16 kHz)
I
F(peak) = 6 A (f = 70 kHz)
I
FSM ≤ 75 A
t
rr ≤ 230 ns / 160 ns
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
anode
and soft recovery characteristic.
The device is intended for use in TV
2
cathode
receivers and PC monitors.
tab
isolated
The BY329X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
V
voltage
V
RRM
Peak repetitive reverse
-
1500
V
voltage
V
RWM
Crest working reverse voltage
-
1300
V
BY329X
-1500
-1500S
I
F(peak)
Peak working forward current
f = 16 kHz
-
6
-
A
f = 70 kHz
-
6
A
I
FRM
Peak repetitive forward
t = 25
s; δ = 0.5; T
hs ≤ 86 C
-
14
A
current
I
F(RMS)
RMS forward current
-
11
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
75
A
current
sinusoidal; T
j = 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
150
C
temperature
k
a
12
case
September 1998
1
Rev 1.100
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