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參數(shù)資料
| 型號(hào)： | 934054935335 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 46K |
| 代理商： | 934054935335 |
1998 May 06
2
Philips Semiconductors
Product specication
Band-switching diode
BA277
FEATURES
Small plastic SMD package
Continuous reverse voltage: max. 35 V
Continuous forward current: max. 100 mA
Low diode capacitance: max. 1.2 pF
Low diode forward resistance: max. 0.7 .
APPLICATIONS
Low loss band switching in VHF television tuners.
Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523 (SC-79) SMD package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1
Simplified outline (SOD523; SC-79)
and symbol.
Marking code: 1.
handbook, halfpage
12
Top view
MAM399
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Ptot
total power dissipation
Ts =90 °C
715
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF =10mA
1
V
IR
reverse current
VR = 25 V
50
nA
VR = 20 V; Tamb =75 °C1
A
Cd
diode capacitance
f = 1 MHz; VR = 6 V; note 1; see Fig.2
1.2
pF
rD
diode forward resistance
IF = 2 mA; f = 100 MHz; note 1; see Fig.3
0.7
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering-point
85
K/W
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