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參數資料
| 型號： | 934054938113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.5 A, 300 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 91K |
| 代理商： | 934054938113 |
1998 Dec 04
2
Philips Semiconductors
Product specication
Ripple blocking diode
BYQ63
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
The SOD57 is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
300
V
VR
continuous reverse voltage
300
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp =85 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
1.05
A
averaged over any 20 ms period;
Tamb =60 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
0.68
A
IFRM
repetitive peak forward current
Ttp =85 °C
9.6
A
Tamb =60 °C
6.4
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
30
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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