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參數資料
| 型號： | 934054967118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 85K |
| 代理商： | 934054967118 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET
with temperature sensing diodes
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Protected N-channel enhancement
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
mode logic level field-effect power
transistor in a plastic envelope
V
(CL)DSR
Drain-source clamp voltage
40
45
55
V
suitable for surface mounting. Using
I
D
Drain current (DC)
52
A
’trench’
technology
the
device
P
tot
Total power dissipation
116
W
features very low on-state resistance
T
j
Junction temperature
175
C
and has integral zener diodes giving
R
DS(ON)
Drain-source on-state
20
m
ESD protection up to 2kV and active
resistance; V
GS = 5 V
drain voltage clamping. Temperature
V
F
Forward voltage,temperature
685
710
735
mV
sensitive diodes are incorporated for
sense diodes
monitoring chip temperature.
-S
F
Negative temperature
1.26
1.4
1.54
mV/K
The device is intended for use in
coefficient, temperature sense
automotive and general purpose
diodes
switching applications.
PINNING - SOT426
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2T1
3
(connected to mb)
4T2
5
source
Fig. 1.
Fig. 2.
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
continuous
-
40
V
DG
Drain-gate voltage
continuous
-
38
V
±V
GS
Gate-source voltage
-
10
V
I
D
Drain current (DC)
T
mb = 25 C
-
52
A
I
D
Drain current (DC)
T
mb = 100 C
-
37
A
I
D
Drain current (DC)
T
mb = 140 C
-
25
A
I
DM
Drain current (pulse peak
T
mb = 25 C
-
208
A
value)
P
tot
Total power dissipation
T
mb = 25 C
-
116
W
I
GD
Drain-gate clamp current
5ms pulse;
= 0.01
-
50
mA
I
GS
Gate-source clamp current
5ms pulse;
= 0.01
-
50
mA
V
TS
Source T1/T2 voltage
-
±100
V
T
stg
Storage temperature
-
- 55
175
C
T
j
Junction temperature
-
- 55
175
C
d
g
s
T1
T2
mb
12
4 5
3
February 1998
1
Rev 1.100
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