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參數資料
| 型號： | 934055065135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變容二極管 |
| 英文描述： | 19.1 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SMD, UMD2, SC-76, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 47K |
| 代理商： | 934055065135 |
2000 Nov 07
2
Philips Semiconductors
Product specication
Low-voltage variable capacitance diode
BB151
FEATURES
Very low capacitance spread
Excellent linearity
Very small plastic SMD package
C3: 10.6 pF; ratio: 1.53
Very low series resistance.
APPLICATIONS
Voltage controlled oscillators (VCO).
DESCRIPTION
The BB151 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small plastic SMD package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
4 columns
ka
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: PA.
Cathode side indicated by a bar.
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
10
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 10 V; see Fig.3
10
nA
VR =10V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance f = 470 MHz; VR is the value at which Cd =9pF
0.4
0.55
Cd
diode capacitance
f = 1 MHz; see Figs 2 and 4
VR = 0.5 V
19.1
pF
VR = 1 V
15.4
16.2
17
pF
VR =2V
12.8
pF
VR = 3 V
9.9
10.6
11.3
pF
VR =4V
9
pF
capacitance ratio
f = 1 MHz
1.45
1.53
capacitance ratio
f = 1 MHz
1.8
C
d1V
()
C
d3V
()
----------------
C
d1V
()
C
d4V
()
----------------
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