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參數資料
| 型號： | 934055301118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 4 A, SNUBBERLESS TRIAC |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | 934055301118 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA204S series B and C
high commutation
BTA204M series B and C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
SYMBOL
PARAMETER
MAX.
MAX. UNIT
a plastic envelope suitable for surface
mounting intended for use in circuits
BTA204S (or BTA204M)-
500B
600B
800B
where high static and dynamic dV/dt
BTA204S (or BTA204M)-
500C
600C
800C
and high dI/dt can occur. These
V
DRM
Repetitive peak
500
600
800
V
devices will commutate the full rated
off-state voltages
rms current at the maximum rated
I
T(RMS)
RMS on-state current
4
A
junction temperature without the aid of
I
TSM
Non-repetitive peak on-state
25
A
a snubber.
current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
NUMBER
S
M
1
MT1
gate
2
MT2
3
gate
MT1
tab
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
4
A
T
mb ≤ 107 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 C prior to
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2tI2t for fusing
t = 10 ms
-
3.1
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 6 A; IG = 0.2 A;
100
A/
s
on-state current after
dI
G/dt = 0.2 A/s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
December 1998
1
Rev 1.000
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