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參數資料
| 型號： | 934055323118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 12 A, TRIAC |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 48K |
| 代理商： | 934055323118 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212B series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25C),
versus junction temperature T
j.
Fig.9. Normalised holding current I
H(Tj)/ IH(25C),
versus junction temperature T
j.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb, versus
pulse width t
p.
Fig.12. Minimum, critical rate of change of
commutating current dI
com/dt versus junction
temperature, dV
com/dt = 20V/s.
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T2+ G+
T2+ G-
T2- G-
Tj/°C
IGT(Tj)
IGT(25°C)
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.175 V
Rs = 0.0316 Ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
t
p
P
t
D
bidirectional
unidirectional
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
1
10
100
20
40
60
80
100
120
140
F TYPE
E TYPE
D TYPE
Tj/C
dIcom/dt (A/ms)
February 2000
4
Rev 1.000
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