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參數(shù)資料
| 型號： | 934055324127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 12 A, TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 53K |
| 代理商： | 934055324127 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
4.0
K/W
without heatsink compound
-
5.5
K/W
R
th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA212X-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
15
25
30
mA
T2+ G-
-
25
30
40
mA
T2- G-
-
25
30
40
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
15
25
30
mA
V
T
On-state voltage
I
T = 17 A
-
1.6
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
1.5
V
D = 400 V; IT = 0.1 A;
0.25
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.5
mA
2 Device does not trigger in the T2-, G+ quadrant.
April 2002
2
Rev 2.000
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