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參數資料
| 型號： | 934055326118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 12 A, TRIAC |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 48K |
| 代理商： | 934055326118 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212B series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 99C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
0
5
10
15
0
5
10
15
20
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
117.5
110
102.5
95
1
-50
0
50
100
150
0
5
10
15
BT138
99 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1
10
100
1000
0
20
40
60
80
100
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
February 2000
3
Rev 1.000
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