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參數資料
| 型號： | 934055343183 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.05 A, 4000 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, PLASTIC PACKAGE-2 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 56K |
| 代理商： | 934055343183 |
2001 Oct 02
2
Philips Semiconductors
Product specication
High-voltage car ignition diode
BYX134GP
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with
extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
The SOD107A is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD107A) and symbol.
handbook, halfpage
ka
MAM404
Cathode indicated by light blue band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
4kV
VRWM
crest working reverse voltage
4kV
IF(AV)
average forward current
50
mA
IFRM
repetitive peak forward current
500
mA
IRSM
non-repetitive peak reverse current
t = 100
s triangular pulse;
Tj max prior to surge
50
mA
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
continuous
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
57V
V(BR)R
reverse avalanche breakdown
voltage
IR = 100 A
5.5
7.5
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
30
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
Tamb =Tleads; lead length = 10 mm
100
K/W
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