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參數資料
型號: 934055417112
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 3.7 A, 200 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數: 3/8頁
文件大小: 54K
代理商: 934055417112
1996 Jun 07
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW95 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 5 A; Tj =Tj max; see Fig.8
1.25
V
IF = 5 A; see Fig.8
1.50
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYW95A
300
V
BYW95B
500
V
BYW95C
700
V
IR
reverse current
VR =VRRMmax;
see Fig.9
1
A
VR =VRRMmax; Tj = 165 °C;
see Fig.9
150
A
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.12
250
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.10
85
pF
maximum slope of
reverse recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = 1A/s;
see Fig.13
7A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
dI
R
dt
--------
相關PDF資料
PDF描述
933500070133 3.7 A, 200 V, SILICON, RECTIFIER DIODE
933500150113 3.7 A, 600 V, SILICON, RECTIFIER DIODE
934016060112 3.7 A, 400 V, SILICON, RECTIFIER DIODE
934015200112 3.7 A, 400 V, SILICON, RECTIFIER DIODE
933500140133 3.7 A, 400 V, SILICON, RECTIFIER DIODE
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