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參數(shù)資料
| 型號(hào)： | 934055427115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, SC-89, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 44K |
| 代理商： | 934055427115 |
1998 Nov 10
3
Philips Semiconductors
Preliminary specication
Schottky barrier double diodes
1PS89SB14; 1PS89SB15;
1PS89SB16
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode unless otherwise specied
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
600
mA
Ptot
total power dissipation (per package)
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode unless otherwise specied
VF
forward voltage
see Fig.5
IF = 0.1 mA
240
mV
IF = 1mA
320
mV
IF =10mA
400
mV
IF =30mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; note 1; see Fig.6
2
A
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.7
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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