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參數資料
| 型號： | 934055438335 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變容二極管 |
| 英文描述： | VHF BAND, 12.5 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, SC-79, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 69K |
| 代理商： | 934055438335 |
1998 Nov 26
2
Philips Semiconductors
Product specication
VHF variable capacitance diode
BB181
FEATURES
Excellent linearity
Ultra small plastic SMD package
C28: 1 pF; ratio: 14.
APPLICATIONS
Electronic tuning in satellite tuners
Tuneable coupling
Voltage controlled oscillators
(VCO).
DESCRIPTION
The BB181 is a variable capacitance
diode, fabricated in planar technology
and encapsulated in the SOD523
(SC-79) ultra small plastic SMD
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
Marking code: N.
Orientation of marking code as shown.
Cathode side indicated by a bar.
handbook, 2 columns
12
MBK441
N
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. VR is the value at which Cd = 9 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR =30V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance
f = 470 MHz; note 1
3
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
817
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
0.7
1.055
pF
capacitance ratio
f = 1 MHz
12
16
C
d 0.5V
()
C
d28V
()
----------------------
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