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參數資料
| 型號： | 934055500118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 324K |
| 代理商： | 934055500118 |
PHB160N03T
N-channel enhancement mode eld-effect transistor
Rev. 01 — 13 September 2000
Product specication
c
M3D166
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PHB160N03T in SOT404 (D2-PAK).
2.
Features
s TrenchMOS technology
s Very low on-state resistance.
3.
Applications
s DC to DC converters
s Switched-mode power supplies
s General purpose switch.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT404 (D2-PAK), simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT404 (D2-PAK)
2
drain (d)
3
source (s)
mb
connected to drain (d)
13
2
MBK116
mb
s
d
g
MBB076
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