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參數資料
| 型號： | 934055534127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 934055534127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF530N
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 100 V
Fast switching
Low thermal resistance
I
D = 17 A
R
DS(ON) ≤ 110 m
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel
enhancement
mode
PIN
DESCRIPTION
field-effect power transistor in a
plastic envelope using ’trench’
1
gate
technology.
2
drain
Applications:-
d.c. to d.c. converters
3
source
switched mode power supplies
tab
drain
The IRF530N is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
100
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
17
A
T
mb = 100 C; VGS = 10 V
-
12
A
I
DM
Pulsed drain current
T
mb = 25 C
-
68
A
P
D
Total power dissipation
T
mb = 25 C
-
79
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 7.8 A;
-
150
mJ
energy
t
p = 300 s; Tj prior to avalanche = 25C;
V
DD ≤ 25 V; RGS = 50 ; VGS = 10 V; refer
to fig:14
I
AS
Peak non-repetitive
-
17
A
avalanche current
d
g
s
1 2 3
tab
gate
source
drain
August 1999
1
Rev 1.100
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