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參數(shù)資料
| 型號(hào)： | 934055559127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 9 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, TO-220F, 2 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 52K |
| 代理商： | 934055559127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOD100 package; R.H.
≤ 65%; clean and
-
1500
V
all terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
-
2500
V
all terminals to external
sinusoidal waveform; R.H.
≤ 65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 2 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
5.5
K/W
heatsink
without heatsink compound
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150C
-
0.90
1.03
V
I
F = 8 A
-
1.05
1.25
V
I
F = 20 A
-
1.20
1.40
V
I
R
Reverse current
V
R = VRRM
-
2.0
50
A
V
R = VRRM; Tj = 100 C
-
0.1
0.35
mA
Q
s
Reverse recovery charge
I
F = 2 A to VR ≥ 30 V;
-
40
60
nC
dI
F/dt = 20 A/s
t
rr
Reverse recovery time
I
F = 1 A to VR ≥ 30 V;
-
50
60
ns
dI
F/dt = 100 A/s
I
rrm
Peak reverse recovery current
I
F = 10 A to VR ≥ 30 V;
-
4.0
5.5
A
dI
F/dt = 50 A/s; Tj = 100C
V
fr
Forward recovery voltage
I
F = 10 A; dIF/dt = 10 A/s
-
2.5
-
V
February 1999
2
Rev 1.400
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