- 您現在的位置：買賣IC網 > PDF目錄50443 > 934055658112 (NXP SEMICONDUCTORS) 3.7 A, 1000 V, SILICON, RECTIFIER DIODE PDF資料下載
參數資料
| 型號： | 934055658112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3.7 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 60K |
| 代理商： | 934055658112 |
1996 Jun 07
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW96 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW96D
800
V
BYW96E
1000
V
VR
continuous reverse voltage
BYW96D
800
V
BYW96E
1000
V
IF(AV)
average forward current
Ttp =50 °C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
3A
IF(AV)
average forward current
Tamb =55 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
1.25
A
IFRM
repetitive peak forward current
Ttp =50 °C; see Fig.4
30
A
Tamb =55 °C; see Fig.5
13
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
70
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.7
65
+175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| 933500080133 | 3.7 A, 1000 V, SILICON, RECTIFIER DIODE |
| 934015310112 | 3 A, 1000 V, SILICON, RECTIFIER DIODE |
| 933500080112 | 3.7 A, 800 V, SILICON, RECTIFIER DIODE |
| 933500160112 | 3.7 A, 1000 V, SILICON, RECTIFIER DIODE |
| 934030920215 | 5.6 V, 0.18 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
發布緊急采購，3分鐘左右您將得到回復。