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參數(shù)資料
型號(hào): 934055725118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 99K
代理商: 934055725118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP23NQ15T, PHB23NQ15T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 150 V
Fast switching
Low thermal resistance
I
D = 23 A
R
DS(ON) ≤ 90 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB23NQ15T is supplied in the SOT404 (D
2PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
150
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
150
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
23
A
T
mb = 100 C; VGS = 10 V
-
16
A
I
DM
Pulsed drain current
T
mb = 25 C
-
92
A
P
D
Total power dissipation
T
mb = 25 C
-
136
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
13
tab
2
12 3
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.000
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