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參數資料
型號: 934055804127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數: 1/11頁
文件大小: 108K
代理商: 934055804127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Very low on-state resistance
V
DSS = 100 V
Fast switching
Low thermal resistance
I
D = 47 A
R
DS(ON) ≤ 25 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB45NQ10T is supplied in the SOT404 (D
2PAK) surface mounting package.
The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
SOT429 (TO247)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
100
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
47
A
T
mb = 100 C; VGS = 10 V
-
33
A
I
DM
Pulsed drain current
T
mb = 25 C
-
188
A
P
D
Total power dissipation
T
mb = 25 C
-
150
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
2
3
1
13
tab
2
12 3
tab
1 It is not possible to make connection to pin 2 of the SOT404 package.
August 1999
1
Rev 1.000
相關PDF資料
PDF描述
934055802118 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
934055805127 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
934055807118 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
934055808127 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934055806118 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
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