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參數(shù)資料
| 型號(hào)： | 934055876135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 77K |
| 代理商： | 934055876135 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHT6NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 100 V
Fast switching
Low thermal resistance
I
D = 6.5 A
R
DS(ON) ≤ 90 m
GENERAL DESCRIPTION
PINNING
SOT223
N-channel
enhancement
mode
PIN
DESCRIPTION
field-effect transistor in a plastic
envelope
using
’trench’
1
gate
technology.
2
drain
Applications:-
Motor and relay drivers
3
source
d.c. to d.c. converters
4
drain (tab)
The PHT6NQ10T is supplied in the
SOT223
surface
mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
100
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current (dc) T
sp =
25 C
-
6.5
A
T
amb =
25 C
-
3
A
I
D
Continuous drain current (dc) T
sp = 100 C
-
4.1
A
T
amb = 100 C
-
1.9
A
I
DM
Pulsed drain current
-
26
A
P
D
Total power dissipation
T
sp = 25 C
-
8.3
W
T
amb =
25 C
-
1.8
W
T
j, Tstg
Operating junction and
- 65
150
C
storage temperature
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance junction to
surface mounted, FR4
12
15
K/W
solder point
board
R
th j-amb
Thermal resistance junction to
surface mounted, FR4
70
-
K/W
ambient
board
d
g
s
4
1
23
August 1999
1
Rev 1.000
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