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參數資料
| 型號： | 934055896127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 9 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, TO-220, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 50K |
| 代理商： | 934055896127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV29X-600
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 600V
Fast switching
Soft recovery characteristic
V
F ≤ 1.03 V
High thermal cycling performance
Low thermal resistance
I
F(peak) = 7 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOD113 (SOT186a)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYV29X-600 is supplied in the
conventional
leaded
SOD113
tab
isolated
(SOT186a) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
Peak repetitive reverse voltage
-
600
V
RWM
Crest working reverse voltage
-
600
V
R
Continuous reverse voltage
-
600
V
I
F(AV)
Average forward current
1
square wave;
δ = 0.5;
-
9
A
T
mb ≤ 100 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
18
A
T
mb ≤ 100 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
70
A
current.
t = 8.3 ms
-
77
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
-
5.5
K/W
heat sink
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
12
case
1 Neglecting switching and reverse current losses.
February 2000
1
Rev 1.100
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